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| GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 5.0 4.2 Cathode 3.85 3.35 o5.1 o4.8 5.9 5.5 1.8 1.2 29 27 1.0 0.5 Chip position 0.6 0.4 fex06306 GEX06306 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Enge Toleranz: Chipoberflache/ Bauteiloberkante q Gute spektrale Anpassung an Si-Fotoempfanger q Sehr plane Oberflache q Gehausegleich mit SFH 217 Anwendungen q Lichtschranken fur Gleich- und Features q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 217 Applications q Light-reflection switches for steady and Wechsellichtbetrieb bis 500 kHz q LWL varying intensity (max. 500 kHz) q Fibre optic transmission Typ Type SFH 485 P Bestellnummer Ordering Code Q62703-Q516 Gehause Package 5-mm-LED-Gehause, plan, klares violettes EpoxyGieharz, Lotspiee im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kurzerer Anschlu 5 mm LED package (T 1 3/4), plane violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 mm (1/10''), anode marking: short lead. Semiconductor Group 1 1998-06-26 SFH 485 P Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, 10 s Surge current Verlustleistung Power dissipation Warmewiderstand, freie Beinchenlange max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Imax, IF = 100 m A Spectral bandwidth at 50 % of Imax Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Abstand Chipoberflache bis Gehausevorderseite Distance chip front to case surface Symbol Symbol peak Wert Value 880 Einheit Unit nm Symbol Symbol Wert Value - 55 ... + 100 100 5 100 2.5 200 375 Einheit Unit C C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA 80 nm 40 0.16 0.4 x 0.4 0.5 ... 1 Grad deg. mm2 mm mm A LxB LxW H Semiconductor Group 2 1998-06-26 SFH 485 P Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Symbol Symbol Wert Value 0.6/0.5 Einheit Unit s tr, tf Co 25 pF VF IR 1.5 (< 1.8) 3.0 (< 3.8) 0.01 ( 1) V A e 25 mW TCI - 0.5 %/K IF = 100 mA Temperature coefficient or Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von peak, IF = 100 mA Temperature coefficient of peak, IF = 100 mA TCV TC -2 0.25 mV/K nm/K Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping at radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Werte Values Einheit Unit Ie > 3.15 mW/sr Ie typ. 48 mW/sr Semiconductor Group 3 1998-06-26 SFH 485 P Relative spectral emission Irel = f () 100 rel % 80 OHR00877 Radiant intensity Ie = f (IF) Ie 100 mA OHR00878 Single pulse, tp = 20 s 10 2 e e (100mA) 10 1 Max. permissible forward current IF = f (TA) 125 OHR00880 F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 800 850 900 950 nm 1000 10 0 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 C 100 T Forward current, IF = f (VF) Single pulse, tp = 20 s 10 1 OHR00881 Permissible pulse handling capability IF = f (), TA = 25 C, duty cycle D = parameter 10 4 mA OHR00886 Forward current versus lead length between the package bottom and the PC-board IF = f (I), TA = 25 C 120 mA OHR00949 F A F 10 0 D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2 F 100 80 10 -1 60 0.5 10 2 DC 40 10 -2 D= 10 -3 tp T tp F 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 0 10 1 s 10 2 tp 0 5 10 15 20 25 mm 30 Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01893 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-06-26 |
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